A Raman study of Au/Te/Au/GaAs (100) ohmic contacts
- 15 January 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (2) , 739-743
- https://doi.org/10.1063/1.351336
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Stable and shallow PdIn ohmic contacts to n-GaAsApplied Physics Letters, 1990
- Thermally stable ohmic contacts to n-type GaAs. VI. InW contact metalJournal of Applied Physics, 1990
- On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs SystemMRS Proceedings, 1990
- Characterization of Pulsed Laser Beam Mixed AuTe/GaAs Ohmic ContactsMRS Proceedings, 1989
- An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd systemJournal of Materials Research, 1988
- A Comparative Study of Te- and Ge-Based OHMIC Contacts on GaAsMRS Proceedings, 1988
- Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of GeJournal of Applied Physics, 1987
- Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAsSolid-State Electronics, 1985
- Models for ohmic contacts on graded crystalline or amorphous heterojunctionsSolid-State Electronics, 1982
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967