1310 nm Evanescent Hybrid III-V/Si Laser Based on DVS-BCB Bonding
- 1 January 2011
- proceedings article
- Published by Optica Publishing Group
Abstract
We present an evanescently-coupled, hybrid III-V/Silicon Fabry-Perot laser based on adhesive (DVS-BCB) bonding, operating at 1310 nm. Maximum optical power in a continuous-wave regime is 3 mW and the threshold current density is 2.41 kA/cm2.Keywords
This publication has 7 references indexed in Scilit:
- Die-to-Die Adhesive Bonding for Evanescently-Coupled Photonic DevicesECS Transactions, 2010
- A Selective-Area Metal Bonding InGaAsP–Si LaserIEEE Photonics Technology Letters, 2010
- Electrically pumped hybrid evanescent Si/InGaAsP lasersOptics Letters, 2009
- A Distributed Bragg Reflector Silicon Evanescent LaserIEEE Photonics Technology Letters, 2008
- A distributed feedback silicon evanescent laserOptics Express, 2008
- 1310nm silicon evanescent laserOptics Express, 2007
- A continuous-wave hybrid AlGaInAs-silicon evanescent laserIEEE Photonics Technology Letters, 2006