Suitability of GaAs Schottky metallizations for continuous device operation at elevated temperatures up to 300°C: a comparative study
- 1 March 1989
- journal article
- physical electronics
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 66 (3) , 437-444
- https://doi.org/10.1080/00207218908925400
Abstract
A comparative study of the thermal stability of Ti-Pt-Au, Ti, W-Au and WSi2-Ti-Pt-Au Schottky contacts on GaAs is presented. Various reliability tests at temperatures up to 400°C have been performed on these contacts leading to the conclusion that Schottky contacts containing refractory metal silicide diffusion barriers such as WSi2-Ti-Pt-Au remain stable even after long term reliability tests at 400°C. Contacts containing only refractory metal diffusion barriers (Ti-Pt-Au, Ti-W-Au) show severe degradations if operated at temperatures around or above 300°C.Keywords
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