Minority carrier mobility model for device simulation

This publication has 15 references indexed in Scilit:

• The effects of emitter region recombination and bandgap narrowing on the current gain and the collector lifetime of high-voltage bipolar transistors
  IEEE Transactions on Electron Devices, 1989
• Heavy doping parameters estimated from transistor measurements
  Solid-State Electronics, 1988
• Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon
  IEEE Transactions on Electron Devices, 1987
• Measurement of hole mobility in heavily doped n-type silicon
  IEEE Electron Device Letters, 1986
• Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment
  Solid-State Electronics, 1983
• Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
  IEEE Transactions on Electron Devices, 1983
• A mobility model for carriers in the MOS inversion layer
  IEEE Transactions on Electron Devices, 1983
• Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon
  Journal of the Electrochemical Society, 1980
• Measurements of bandgap narrowing in Si bipolar transistors
  Solid-State Electronics, 1976
• Large-signal analysis of a silicon Read diode oscillator
  IEEE Transactions on Electron Devices, 1969