DLTS studies of deep traps in CdTe
- 10 July 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (19) , L573-L583
- https://doi.org/10.1088/0022-3719/15/19/001
Abstract
The results are described of DLTS measurements in n-CdTe using as-grown, annealed, doped and undoped samples with free carrier concentrations ranging from 6*1014 cm-3 to 1017 cm-3. Nine separate electron traps were found with emission activation energies lying between 0.22 eV and 0.89 eV. Three of the traps exhibited strongly temperature-dependent filling rates and one of these three showed bi-exponential decay. The trap model proposed by Takabe et al. (1982) and based on a thermally activated capture cross section is found to be inadequate.Keywords
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