Determination of defect structures by ion-channeling and by X-ray diffraction — A comparative study
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3) , 532-536
- https://doi.org/10.1016/0029-554x(81)91057-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- The influence of light- and heavy-ion irradiation on the structure, resistivity, and superconducting transition temperature of V3Si. A comparative studyJournal of Low Temperature Physics, 1980
- X-ray diffraction studies on He- and Ar-irradiated Nb3Ge thin filmsSolid State Communications, 1979
- Computer simulation of channeling measurements in he-irradiated v3si single crystalsRadiation Effects, 1979
- Computer simulation of channelling measurements on V3Si single crystalsRadiation Effects, 1979
- Channelling effect measurements of 4He-induced damage in V3Si single crystalsSolid State Communications, 1977