Computer simulation of channeling measurements in he-irradiated v₃si single crystals

Publisher Website

1 January 1979

journal article
Published by Taylor & Francis in Radiation Effects

Vol. 40 (3) , 161-166
https://doi.org/10.1080/00337577908237918

Abstract

No abstract available

Keywords

This publication has 10 references indexed in Scilit:

Radiation damage and superconductivity in V3Si single crystals
Journal of Nuclear Materials, 1978
Channeling in $V_{3}$ Si: Atomic Displacements and Electron-Phonon/Defect Interactions
Physical Review Letters, 1977
Channelling effect measurements of 4He-induced damage in V3Si single crystals
Solid State Communications, 1977
Comments on Defect Production and Stoichiometry in $A - 15$ Superconductors
Physical Review Letters, 1976
Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated gold
Nuclear Instruments and Methods, 1976
Distribution across the channel of defects induced by nitrogen bombardment in silicon
Applied Physics Letters, 1976
On “measurements” of radiation damage by backscattering experiments
Radiation Effects, 1976
Ion Implantation in Superconducting Thin Films
Published by Springer Nature ,1974
Dechanneling from 2-MeV ${He}^{+}$ Damage in Gold
Physical Review B, 1973
Defect studies in crystals by means of channeling
Canadian Journal of Physics, 1968