Mass transfer and kinetics of the chemical vapor deposition of SiC onto fibers
- 1 August 1998
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 13 (8) , 2251-2261
- https://doi.org/10.1557/jmr.1998.0315
Abstract
An internally consistent set of data was generated for the chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (MTS) and H2 at atmospheric pressure. A moving fiber tow was used as the substrate. Coating rates between 0.3 and 3.7 µm/min and deposition efficiencies between 24 and 48% were obtained for MTS and H2 flow rates in the range 30 to 200 cm3/min and 300 to 2000 cm3/min, respectively. The data were analyzed and found to be best fit under a mass transfer regime. Based on this fit, a value of the constant in the Chilton–Colburn j factor expression for a moving fiber tow was estimated to be 2.74 × 10−6 with a standard deviation of 3.2 × 10−7. The efficiency of the reaction was found to decrease with increases in the total flow rate, indicating that the effect of the decreased residence time of reagents in the reactor was larger than the increase in the mass transfer coefficient. Finally, a comparison between the efficiencies for a stationary and a moving tow revealed that the moving tow had a higher efficiency, possibly due to a disruption of the boundary layer by the tow motion or due to the decrease in the canning of the moving tow.Keywords
This publication has 10 references indexed in Scilit:
- Continuous Fabrication of Silicon Carbide Fiber Tows by Chemical Vapor DepositionJournal of the American Ceramic Society, 1995
- Kinetic study of silicon carbide deposited from methyltrichlorosilane precursorJournal of Materials Research, 1994
- Growth mechanism for CVD BETA-SiC synthesisScripta Metallurgica et Materialia, 1993
- Depletion Effects of Silicon Carbide Deposition from MethyltrichlorosilaneJournal of the American Ceramic Society, 1992
- Kinetic Analysis of Chemical Vapor Deposition of Boron NitrideJournal of the American Ceramic Society, 1991
- Strengths of Ceramic Fibers at Elevated TemperaturesJournal of the American Ceramic Society, 1989
- Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °CJournal of Vacuum Science & Technology A, 1988
- Chemical vapor deposition of silicon carbide for coated fuel particlesJournal of Nuclear Materials, 1987
- SOLGASMIX-PV, a computer program to calculate equilibrium relationships in complex chemical systemsPublished by Office of Scientific and Technical Information (OSTI) ,1977
- Mass Transfer (Absorption) Coefficients Prediction from Data on Heat Transfer and Fluid FrictionIndustrial & Engineering Chemistry, 1934