Growth mechanism for CVD BETA-SiC synthesis
- 15 January 1993
- journal article
- Published by Elsevier in Scripta Metallurgica et Materialia
- Vol. 28 (2) , 179-183
- https://doi.org/10.1016/0956-716x(93)90559-b
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The Effect of CH 4 on CVD β ‐ SiC GrowthJournal of the Electrochemical Society, 1990
- Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °CJournal of Vacuum Science & Technology A, 1988
- Thermodynamic Equilibria in the Si‐H‐Cl and Si‐H‐Br SystemsJournal of the Electrochemical Society, 1988
- Growth Characteristics of CVD Beta‐Silicon CarbideJournal of the Electrochemical Society, 1987
- Chemical vapor deposition of silicon carbide for coated fuel particlesJournal of Nuclear Materials, 1987
- Propagation mechanism of chemical vapor deposited β-sic dendritesScripta Metallurgica, 1986
- Thermodynamic Analysis and Kinetic Implications of Chemical Vapor Deposition of Sic from Si‐C‐C1‐H Gas SystemsJournal of the American Ceramic Society, 1985
- Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon CarbideJournal of the American Ceramic Society, 1983
- High Temperature Reactions in the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1974
- The Epitaxial Growth of Silicon CarbideJournal of the Electrochemical Society, 1966