Growth of semi-insulating InP: Fe in the low pressure hydride VPE system
- 1 July 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 121 (3) , 373-380
- https://doi.org/10.1016/0022-0248(92)90147-b
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPEJournal of Crystal Growth, 1991
- An investigation on hydride VPE growth and properties of semi-insulating InP:FeJournal of Electronic Materials, 1990
- Epitaxial growth of highly Fe-doped semi-insulating InP layers by N2 carrier gas mixed hydride vapor phase epitaxyJournal of Crystal Growth, 1989
- Deposition of high quality GaAs films at fast rates in the LP-CVD systemJournal of Crystal Growth, 1989
- The growth of iron doped semi-insulating InP by hydride vapor phase epitaxy in a nitrogen ambientJournal of Crystal Growth, 1988
- Fe-doped semi-insulating InP grown by chloride vapor-phase epitaxyJournal of Applied Physics, 1987
- Semi-insulating InP grown by low pressure MOCVDJournal of Electronic Materials, 1987
- The Effect of PH 3 Pyrolysis on the Morphology and Growth Rate of InP Grown by Hydride Vapor Phase EpitaxyJournal of the Electrochemical Society, 1987
- MOVPE growth and characteristics of Fe-doped semi-insulating InP layersElectronics Letters, 1986
- Diffusion, solubility, and electrical activity of Co and Fe in InPPhysica Status Solidi (a), 1977