Epitaxial growth of highly Fe-doped semi-insulating InP layers by N2 carrier gas mixed hydride vapor phase epitaxy
- 1 May 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (1) , 7-12
- https://doi.org/10.1016/0022-0248(89)90269-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
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