Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition
- 23 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (21) , 1797-1799
- https://doi.org/10.1063/1.99629
Abstract
This letter presents for the first time the results of low‐temperature (800 °C) silicon epitaxial growth on (100) patterned oxide wafers by ultralow‐pressure chemical vapor deposition. The epitaxial layers were deposited at 6 mTorr of SiH4 following an in situ argon sputter cleaning step. The films on the exposed single‐crystal silicon islands were epitaxial with high structural quality, while those on the oxide were polycrystalline with columnar grains. The growth rate of epitaxial silicon was 2.5 times that of polycrystalline silicon. The transition region between the epitaxial and polycrystalline silicon deposited is very sharp, confined to a boundary which is parallel to the growth direction, and located on the edges of the exposed silicon islands.Keywords
This publication has 6 references indexed in Scilit:
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial qualityJournal of Applied Physics, 1987
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerationsJournal of Applied Physics, 1987
- Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial siliconIEEE Electron Device Letters, 1987
- Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVDMRS Proceedings, 1986
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Low-pressure silicon epitaxyIEEE Transactions on Electron Devices, 1982