Approach of selective nucleation and epitaxy of diamond films on Si(100)

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Abstract
Heteroepitaxial diamond films were selectively nucleated and grown on mirror‐polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 μm thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine‐line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 μm was achieved.