Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors

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Abstract
Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.