Ohmic hole mobility in cubic semiconductors
- 1 January 1974
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 35 (12) , 1605-1614
- https://doi.org/10.1016/s0022-3697(74)80171-x
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- Hole Transport in Polar SemiconductorsPhysica Status Solidi (b), 1972
- Nonpolar-lattice scattering for holes in cubic semiconductorsLettere al Nuovo Cimento (1971-1985), 1972
- Polar Mobility of Holes in III-V CompoundsPhysical Review B, 1971
- Lattice Mobility of Holes in III-V CompoundsPhysical Review B, 1970
- Temperature-dependence of the combined effective mass of holes in siliconLettere al Nuovo Cimento (1971-1985), 1970
- On the Temperature Dependence of Hole Mobility in SiliconPhysica Status Solidi (b), 1970
- Conductivity of Hot Holes in Silicon at 77 °KPhysica Status Solidi (b), 1970
- Analysis of Lattice and Ionized Impurity Scattering in-Type GermaniumPhysical Review B, 1962
- Lattice-Scattering Mobility of Holes in GermaniumPhysical Review B, 1956
- Scattering of Holes by Phonons in GermaniumPhysical Review B, 1956