Effective Masses of Heavy and Light Holes in Ge and Si
- 1 May 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 99 (1) , K9-K12
- https://doi.org/10.1002/pssb.2220990149
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Hole drift velocity in siliconPhysical Review B, 1975
- Ohmic hole mobility in cubic semiconductorsJournal of Physics and Chemistry of Solids, 1974
- Hole Transport in Polar SemiconductorsPhysica Status Solidi (b), 1972
- Polar Mobility of Holes in III-V CompoundsPhysical Review B, 1971
- Drift velocity of electrons and holes and associated anisotropic effects in siliconJournal of Physics and Chemistry of Solids, 1971
- Lattice Mobility of Holes in III-V CompoundsPhysical Review B, 1970
- Analysis of Lattice and Ionized Impurity Scattering in-Type GermaniumPhysical Review B, 1962
- Impurity Effects upon Mobility in SiliconJournal of Applied Physics, 1960
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955