Low-Resistivity Highly Transparent Indium-Tin-Oxide Thin Films Prepared at Room Temperature by Synchrotron Radiation Ablation

Abstract
High-transparency, low-electrical-resistivity indium-tin-oxide (ITO)thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (ρ=1.3×10-4 Ω·cm) and high-transparency properties in the visible region (T = 83% at 550 nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.