High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
- 1 December 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (12B) , L1675
- https://doi.org/10.1143/jjap.34.l1675
Abstract
Both anisotropic ablation and thin film formation of polytetrafluoroethylene (PTFE) were successfully demonstrated using synchrotron radiation (SR) irradiation of PTFE, that is, the SR ablation process. Anisotropic ablation by the SR irradiation was performed at an extremely high rate of 3500 µm/min at a PTFE target temperature of 200° C. Moreover, a PTFE thin film was formed at a high rate of 2.6 µm/min using SR ablation of PTFE. The chemical structure of the deposited film was similar to that of the PTFE target as determined from Fourier transform infrared absorption spectroscopy (FT-IR) analysis.Keywords
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