Index guided single stripe lasers fabricated by selective area growth in a metalorganic chemical vapor deposition system
- 15 September 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (6) , 2569-2570
- https://doi.org/10.1063/1.339426
Abstract
Index guided single stripe lasers have been fabricated by using a one‐step selective area growth technique in the metalorganic chemical vapor deposition system. By pyrolytically depositing SiO or SiO2 layers on GaAs substrate, and lithographically defining the stripes, single stripe heterostructure lasers can be achieved on the uncovered substrate while polycrystalline films are observed beyond the stripe regions. The device operated with a single spatial mode for up to more than three times the threshold current.This publication has 7 references indexed in Scilit:
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