Study of dislocations in highly in doped GaAs crystals grown by liquid encapsulation czochralski technique
- 30 June 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (3) , 648-654
- https://doi.org/10.1016/0022-0248(85)90373-2
Abstract
No abstract availableKeywords
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