Dislocation Density and Sheet Resistance Variations Across Semi-Insulating GaAs Wafers
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (7) , 943-949
- https://doi.org/10.1109/tmtt.1982.1131181
Abstract
Dislocation densities and sheet resistances have been measured acrossKeywords
This publication has 11 references indexed in Scilit:
- Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applicationsIEEE Transactions on Electron Devices, 1981
- Theory and application of a nondestructive photovoltaic technique for the measurement of resistivity variations in circular semiconductor slicesSolid-State Electronics, 1980
- An evaluation of the thermal and elastic constants affecting GaAs crystal growthJournal of Crystal Growth, 1980
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Measurement of High Resistivity Semiconductors Using the van der Pauw MethodReview of Scientific Instruments, 1973
- A dislocation „etch-memory” effect in gallium arsenidePhysica Status Solidi (a), 1973
- Like-sign asymmetric dislocations in zinc-blende structureApplied Physics Letters, 1972
- Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O SystemJournal of the Electrochemical Society, 1971
- Analysis of the temperature distribution in pulled crystalsJournal of Crystal Growth, 1968
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965