Measurement of resistivity of silicon by the spreading resistance method
- 1 March 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (3) , 247-248
- https://doi.org/10.1016/0038-1101(71)90039-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- On the Infrared Thickness Measurement of Epitaxially Grown Silicon LayersApplied Optics, 1970
- Spreading resistance correction factorsSolid-State Electronics, 1969
- Application of Multilayer Potential Distribution to Spreading Resistance Correction FactorsJournal of the Electrochemical Society, 1969
- Determination of Mobility and Its Profile in n/n+ Silicon Epitaxial LayersJournal of the Electrochemical Society, 1969
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967
- Measurement of diffusion profile of Zn in n-type GaAs by a spreading resistance techniqueSolid-State Electronics, 1967
- Probing Technique for Measuring the Potential Distribution in SemiconductorsReview of Scientific Instruments, 1967
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966
- Comparison of resistivity measurement techniques on epitaxial siliconSolid-State Electronics, 1963