Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As

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1 December 1989

journal article
Published by Elsevier in Solid-State Electronics

Vol. 32 (12) , 1621-1625
https://doi.org/10.1016/0038-1101(89)90284-0

Abstract

No abstract available

Keywords

This publication has 10 references indexed in Scilit:

Excitonic lifetimes in thin ${In}_{x}$ ${Ga}_{1 - x}$ As/InP quantum wells
Physical Review B, 1989
Tunneling escape time of electrons from a quantum well under the influence of an electric field
Applied Physics Letters, 1989
Photoinduced Space-Charge Buildup by Asymmetric Electron and Hole Tunneling in Coupled Quantum Wells
Physical Review Letters, 1988
Hot-carrier energy-loss rates in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells
Physical Review B, 1988
Tunneling process in AlAs/GaAs double quantum wells studied by photoluminescence
Journal of Applied Physics, 1988
Tunneling escape rate of electrons from quantum well in double-barrier heterostructures
Physical Review Letters, 1987
Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As
Applied Physics Letters, 1987
Tunneling in In0.53Ga0.47As-InP double-barrier structures
Applied Physics Letters, 1987
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
IEEE Journal of Quantum Electronics, 1986
A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
IEEE Journal of Quantum Electronics, 1986