The effects of hot-electron degradation on analog MOSFET performance
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 553-556
- https://doi.org/10.1109/iedm.1990.237138
Abstract
Many analog MOSFET performance parameters are found to be very sensitive to hot-electron stress, especially compared with digital parameters that are normally monitored. Drain output resistance degradation is characterized in detail using existing hot-electron reliability concepts and lifetime prediction models. The impact of drain output resistance degradation on the performance of a CMOS single-ended output differential amplifier is found to be a sensitive function of the particular circuit design and operating conditions.<>Keywords
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