On the quaternary NGa‐NAl‐NAs‐NGe phase diagram
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (1) , 7-11
- https://doi.org/10.1002/crat.19810160103
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Alx‐Ga1−xAs layersCrystal Research and Technology, 1980
- Solubility and point defect-dopant interactions in gallium arsenide—IIIJournal of Physics and Chemistry of Solids, 1979
- The Ga–As–Ge–Sn system: 800 °C liquidus isotherm and electrical properties of Ge–Sn-doped GaAsJournal of Applied Physics, 1973
- Distribution Coefficient of Germanium in Gallium Arsenide Crystals Grown from Gallium SolutionsJournal of Applied Physics, 1971
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- The gallium-arsenic-tin and gallium-arsenic-germanium ternary systemsJournal of the Less Common Metals, 1966
- Phase equilibria of III–V compoundsActa Metallurgica, 1963
- Germanium and Silicon Liquidus CurvesBell System Technical Journal, 1960