High-dose mixed Ga/As and Ga/P ion implantations in silicon single crystals
- 1 January 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 846-850
- https://doi.org/10.1016/0168-583x(93)90695-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The chemical interaction between high-concentration, mixed-ion-implanted group-III and -V impurities in siliconJournal of Applied Physics, 1992
- Rapid thermal annealing of high concentration mixed As/In- and P/In-implanted silicon single crystalsJournal of Applied Physics, 1990
- Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channelingApplied Physics Letters, 1990
- Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopyApplied Physics A, 1989
- Ion channeling and perturbed angular correlation (pac) studies of In-As atom Pairs in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted siliconJournal of Vacuum Science & Technology B, 1983