Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S.
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 9 references indexed in Scilit:
- Linewidth enhancement factor for GaInSbAs/GaSb lasersApplied Physics Letters, 1991
- Interface microstructure of titanium thin-film/silicon single-crystal substrate correlated with electrical barrier heightsJournal of Applied Physics, 1991
- In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR)Thermal Annealing of TI/Polysilicon BilayersMRS Proceedings, 1991
- Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/IEEE Transactions on Electron Devices, 1991
- A comparison of the reaction of titanium with amorphous and monocrystalline siliconJournal of Applied Physics, 1990
- Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer FilmsMRS Proceedings, 1990
- Analysis of nonisothermal transformation kinetics; tempering of iron-carbon and iron-nitrogen martensitesMetallurgical Transactions A, 1988
- Titanium disilicide formation on heavily doped silicon substratesJournal of Applied Physics, 1987
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987