The difference in topography induced by Ar+and Cl+ion bombardment of si
- 1 January 1985
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 87 (5) , 229-240
- https://doi.org/10.1080/01422448608209726
Abstract
(1985). The difference in topography induced by Ar+ and Cl+ ion bombardment of si. Radiation Effects: Vol. 87, No. 5, pp. 229-240.Keywords
This publication has 10 references indexed in Scilit:
- Sputtering induced topography development on f.c.c. metalsApplied Physics A, 1985
- Ion‐bombardment‐induced changes in the surface topography of MBE‐grown silicon on gallium phosphideSurface and Interface Analysis, 1985
- The effect of ion species on bombardment induced topography during ion etching of siliconVacuum, 1984
- Beam-induced broadening effects in sputter depth profilingVacuum, 1984
- Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardmentVacuum, 1984
- The mechanisms of etch pit and ripple structure formation on ion bombarded Si and other amorphous solidsNuclear Instruments and Methods, 1980
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980
- Epitaxial regrowth of Ar-implanted amorphous siliconJournal of Applied Physics, 1978
- Ion bombardment induced ripple topography on amorphous solidsRadiation Effects, 1977
- The topography of sputtered semiconductorsRadiation Effects, 1973