Analysis of Damage in MOS Devices for Several Radiation Environments
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1236-1241
- https://doi.org/10.1109/tns.1984.4333489
Abstract
Recent results on hardened and unhardened CMOS inverters are analyzed. New experimental results indicate that lateral hole transport promotes a large interface state buildup in n-channel devices irradiated with the gate grounded. Other prompt results can be explained by recombination models. Annealing results in hardened oxides can be predicted using linear systems theory.Keywords
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