Integration of GaN with Si using a AuGe-mediated wafer bonding technique

This publication has 11 references indexed in Scilit:

• Single-phase hexagonal GaN grown on AlAs/GaAs(001)
  Applied Physics Letters, 2000
• Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off
  Applied Physics Letters, 1999
• Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
  Applied Physics Letters, 1999
• Electrical properties of wafer-bonded GaAs/Si heterojunctions
  Applied Physics Letters, 1998
• Enhancement of acoustic- and optic-phonon generation by terahertz radiations in a two-dimensional electron system
  Applied Physics Letters, 1998
• Ultraviolet and violet GaN light emitting diodes on silicon
  Applied Physics Letters, 1998
• Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
  Applied Physics Letters, 1997
• Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces
  Physical Review B, 1994
• Solid-state reaction-mediated low-temperature bonding of GaAs and InP wafers to Si substrates
  Applied Physics Letters, 1994
• Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
  Applied Physics Letters, 1991