Solid-state reaction-mediated low-temperature bonding of GaAs and InP wafers to Si substrates
- 7 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (6) , 772-774
- https://doi.org/10.1063/1.111008
Abstract
We report a low-temperature wafer bonding method for the realization of integration of GaAs- and InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280–300 °C by taking advantage of the low-temperature solid-state reactions occurring at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. Both the simple mechanical test and standard thermal cycling test prove excellent structural integrity of the joined wafers. Structural analyses reveal only limited interfacial reactions as well as solid-phase epitaxial regrowth of GeSi alloys on the Si substrate.Keywords
This publication has 11 references indexed in Scilit:
- Hybrid integration of bipolar transistors and microlasers: Current-controlled microlaser smart pixelsApplied Physics Letters, 1993
- Low-temperature solid-phase heteroepitaxial growth of Ge-rich SixGe1−x alloys on Si (100) by thermal annealing a-Ge/Au bilayersApplied Physics Letters, 1992
- High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substratesApplied Physics Letters, 1992
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Rastered, uniformly separated wavelengths emitted from a two-dimensional vertical-cavity surface-emitting laser arrayApplied Physics Letters, 1991
- Surface-emitting microlasers for photonic switching and interchip connectionsOptical Engineering, 1990
- Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substratesApplied Physics Letters, 1989
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Transmission Electron Microscope Study of Interfacial Reactions in Gold-Germanium Contact to Gallium ArsenideMRS Proceedings, 1985