Far-infrared photovoltaic effect in a Landau level diode
- 10 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2) , 162-164
- https://doi.org/10.1063/1.102130
Abstract
We have investigated the far-infrared (FIR) photoresponse of a Landau level diode. A negative photovoltaic current is observed. It results from carriers generated by cyclotron resonance transitions in the two-dimensional depletion region at the gate edge of the device and subsequently swept out of the depletion region by the strong built-in electric field. The potential use of this device as a tunable FIR photodetector is discussed.Keywords
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