ZnSe-based MBE-grown photodiodes
- 2 February 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 184-185, 1319-1323
- https://doi.org/10.1016/s0022-0248(98)80272-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Study of current-voltage characteristic in a ZnSe-based II-VI laser diodeApplied Physics Letters, 1993
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Optical properties of ZnSePhysical Review B, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990