Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.Keywords
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