Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transistors
- 1 August 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (8R) , 2349-2351
- https://doi.org/10.1143/jjap.31.2349
Abstract
The minimum emitter-base contact spacing necessary to prevent current gain degradation is discussed for Npn heterojunction bipolar transistors designed for high-speed applications. Theoretical calculations are performed for various base doping levels, base thicknesses, and emitter widths. These results indicate that the minimum spacing for different design parameters varies between 400 Å and 1300 Å.Keywords
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