Effect of the electron temperature on the gate-induced charge in small size mos transistors

This publication has 7 references indexed in Scilit:

• Hot-carrier constraints on transient transport in very small semiconductor devices
  IEEE Transactions on Electron Devices, 1981
• 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints
  IEEE Transactions on Electron Devices, 1979
• Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands
  Solid State Communications, 1978
• Review of experimental aspects of hot electron transport in MOS structures
  Solid-State Electronics, 1978
• A review of some charge transport properties of silicon
  Solid-State Electronics, 1977
• The current-voltage characteristics of field-effect transistors with short channels
  Solid State Communications, 1976
• Transport Properties of Electrons in Inverted Silicon Surfaces
  Physical Review B, 1968