Silicon Antisite in4HSiC

Electron paramagnetic resonance spectrum with ${\mathrm{C}}_{3V}$ symmetry and a spin $S=1/2\mathrm{}$ has been observed in $p$-type, electron-irradiated $4H$ SiC. Based on the observed ${}^{29}\mathrm{Si}$ hyperfine structures it is suggested that the defect is the isolated silicon antisite $\left({\mathrm{Si}}_{\mathrm{C}}\right)$. The spin $S=1/2\mathrm{}$ and the observation of the defect only in $p$-type material suggest that the ${\mathrm{Si}}_{\mathrm{C}}$ is in the positive-charge state. A strong temperature dependence of the $g$ value and hyperfine coupling constant of the ${\mathrm{Si}}_{\mathrm{C}}^{+}$ center indicates a considerable lattice relaxation in the vicinity of the defect.