Intrinsic Doping: A New Approach forn-Type Modulation Doping in InP-Based Heterostructures

A new approach for $n$-type modulation doping in InP-based heterostructures is proposed where intrinsic defects are utilized to provide charge carriers without an external shallow impurity doping source. The success of this approach is demonstrated by results from InGaAs/InP heterostructures, where doping is provided by ${\mathrm{P}}_{\mathrm{In}}$ antisites, preferably introduced during off-stoichiometric growth of InP. The efficiency of electron transfer and quantum mobility of a two-dimensional electron gas formed near the heterointerface is shown to be much higher as compared to traditional extrinsic doping.