Origin of n-type conductivity of low-temperature grown InP
- 1 July 1994
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 600-602
- https://doi.org/10.1063/1.357052
Abstract
It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular‐beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n‐type conducting due to autoionization of the PIn antisite.This publication has 11 references indexed in Scilit:
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