Optically detected magnetic resonance studies of low-temperature InP
- 1 December 1993
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (12) , 1491-1494
- https://doi.org/10.1007/bf02650005
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989
- Electron paramagnetic resonance identification of the phosphorus antisite in electron-irradiated InPApplied Physics Letters, 1984
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981