Electronic properties of low-temperature InP
- 1 December 1993
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (12) , 1487-1490
- https://doi.org/10.1007/bf02650004
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Optically detected magnetic resonance studies of low-temperature InPJournal of Electronic Materials, 1993
- Phosphorus antisite defects in low-temperature InPPhysical Review B, 1993
- Electrical properties of InP grown by gas-source molecular beam epitaxy at low temperatureApplied Physics Letters, 1992
- Study of the influence of the phosphorus pressure on the preparation of nominally undoped semi-insulating InP wafersJournal of Applied Physics, 1991
- Optically detected magnetic resonance study of antisite-to-acceptor and related recombination processes in as-grown InP:ZnPhysical Review B, 1988
- Band-edge hydrostatic deformation potentials in III-V semiconductorsPhysical Review Letters, 1987
- Applications of electron paramagnetic resonance and optically-detected magnetic resonance to InP materialsJournal of Crystal Growth, 1987