Electron and hole confinement in stacked self-assembled InP quantum dots
- 15 October 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 62 (15) , 10324-10328
- https://doi.org/10.1103/physrevb.62.10324
Abstract
We report photoluminescence measurements on stacked self-assembled InP quantum dots in magnetic fields up to 50 T. For triply stacked layers the dots become strongly coupled when the layer separation is 4 nm or less. In contrast, doubly stacked layers show no sign of coupling. We explain this puzzling difference in coupling by proposing a model in which the holes are weakly confined in the layers separating the layers of dots, and are responsible for the coupling. Since only one such intervening layer exists in the doubly stacked dots coupling is excluded. Our model is strongly supported by the exciton masses and radii derived from our experimental results, and is consistent with available theory.
Keywords
This publication has 17 references indexed in Scilit:
- Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dotsApplied Physics Letters, 2000
- Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dotsApplied Physics Letters, 2000
- Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealingApplied Physics Letters, 2000
- Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structuresApplied Physics Letters, 2000
- Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)Applied Physics Letters, 2000
- High-power quantum-dot lasers at 1100 nmApplied Physics Letters, 2000
- Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasersJournal of Applied Physics, 2000
- Magnetophotoluminescence of stacked self-assembled InP quantum dotsApplied Physics Letters, 1999
- Structural and optical properties of vertically aligned InP quantum dotsApplied Physics Letters, 1997
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996