Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots
- 5 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (23) , 3343-3345
- https://doi.org/10.1063/1.126642
Abstract
We report room-temperature injection lasing of self-assembled InP/GaInP quantum dots. Stimulated emission occurs via the ground state at λ=728 nm for cavities as short as 0.5 mm. Threshold current densities of 2.3 kA/cm2 and external differential quantum efficiencies of 8.5% have been measured for 2 mm long devices. Light output power as high as 250 mW without saturation effects can be reached in pulsed excitation. Analysis of temperature-dependent laser emission indicates the thermal coupling of charge carriers in different quantum dots at higher temperatures.Keywords
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