Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
- 7 February 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (6) , 691-693
- https://doi.org/10.1063/1.125863
Abstract
We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescencelinewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots’ height to their diameter.Keywords
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