As/Ga ratio dependence of Ga adatom incorporation kinetics at steps on vicinal GaAs(001) surfaces
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 494-498
- https://doi.org/10.1016/0022-0248(93)90668-m
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Misorientation dependence of epitaxial growth on vicinal GaAs(001)Physical Review B, 1992
- Ga adatom incorporation kinetics at steps on vicinal GaAs (001) surfaces during growth of GaAs by molecular beam epitaxyJournal of Applied Physics, 1992
- Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001)Applied Physics Letters, 1992
- On the period of reflection high-energy electron diffraction intensity oscillations during Si molecular-beam epitaxy on vicinal Si(001)Journal of Applied Physics, 1991
- Nonlinear model for temporal evolution of stepped surfaces during molecular-beam epitaxyPhysical Review B, 1990
- On the RHEED specular beam and its intensity oscillation during MBE growth of GaAsSurface Science, 1990
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) SubstratesJapanese Journal of Applied Physics, 1989
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981