Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
- 1 April 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (4) , 1849-1854
- https://doi.org/10.1063/1.332821
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Thermal oxidation of nickel disilicideApplied Physics Letters, 1982
- Studies of the Growth and Oxidation of Metal‐Silicides Using Radioactive 31Si as TracerJournal of the Electrochemical Society, 1981
- Oxidation mechanisms in TiSi2 films on single silicon substratesApplied Physics Letters, 1980
- Thermal oxidation of hafnium silicide films on siliconApplied Physics Letters, 1980
- Studies of steam-oxidized WSi2 by Auger sputter profilingApplied Physics Letters, 1980
- Oxidation of tantalum disilicide on polycrystalline siliconJournal of Applied Physics, 1980
- Characterization of Thin Film Molybdenum Silicide OxideJournal of the Electrochemical Society, 1980
- Kinetics of the thermal oxidation of WSi2Applied Physics Letters, 1979
- Oxidation of sputtered molybdenum silicide thin filmsApplied Physics Letters, 1978
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978