Optical Dispersion by Wannier Excitons
- 27 November 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 75 (22) , 4090-4093
- https://doi.org/10.1103/physrevlett.75.4090
Abstract
An analytical expression of the complex dielectric constant of Wannier excitons is obtained, which includes exactly the contributions of all bound and unbound states. It allows an improved description of the excitonic influence on the optical properties of semiconductors near the band gap, especially with respect to dispersion effects.Keywords
This publication has 16 references indexed in Scilit:
- Effect of dispersion on the reflectivity of an asymmetric Fabry–Pérot étalonApplied Physics Letters, 1995
- Influence of reflectivity on femtosecond transmission spectroscopy of thin GaAs filmsOptics Communications, 1994
- Optical Processes in MicrocavitiesPhysics Today, 1993
- Excitonic effects in the optical spectrum of GaAsPhysical Review B, 1990
- Electrodynamics of the Semiconductor Band EdgePublished by Springer Nature ,1987
- Optical properties of the band-edge exciton in GaSe crystals at 10 KPhysical Review B, 1980
- New Analysis of Direct Exciton Transitions: Application to GaPPhysical Review Letters, 1971
- Further Contribution to the Theory of the Line-Shape of the Exciton Absorption BandProgress of Theoretical Physics, 1962
- Theory of Line-Shapes of the Exciton Absorption BandsProgress of Theoretical Physics, 1958
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957