Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

This publication has 24 references indexed in Scilit:

• Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells
  Applied Physics Letters, 1995
• Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3
  Applied Physics Letters, 1994
• High hole mobility in SiGe alloys for device applications
  Applied Physics Letters, 1994
• Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas
  Applied Physics Letters, 1994
• Theoretical hole mobility in a narrow Si/SiGe quantum well
  Physical Review B, 1993
• Cyclotron resonance studies of two-dimensional holes in strained Si1−xGex/Si quantum wells
  Applied Physics Letters, 1993
• VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES
  Le Journal de Physique Colloques, 1987
• Electronic properties of two-dimensional systems
  Reviews of Modern Physics, 1982
• Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors
  Solid State Communications, 1974
• Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces
  Japanese Journal of Applied Physics, 1969