Thermal annealing effects on p-type conductivity of nitrogendoped ZnSe grown by metalorganic vapor phase epitaxy
- 1 March 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (3) , 137-141
- https://doi.org/10.1007/bf02659886
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photo-assisted metalorganic vapor-phase epitaxy for nitrogen doping and fabrication of blue-green light emitting devices of ZnSe-based semiconductorsJournal of Crystal Growth, 1994
- Nitrogen doping in ZnSe by photo-assisted metalorgani vapor phase epitaxyJournal of Electronic Materials, 1994
- Novel technique for p-type nitrogen doped ZnSe epitaxial layersApplied Physics Letters, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- Photo-assisted metalorganic vapor phase epitaxial growth of wide-gap II–VI semiconductorsJournal of Crystal Growth, 1992
- Electrical characterization of p-type ZnSe:Li epilayers grown on p+-GaAs by molecular-beam epitaxyJournal of Applied Physics, 1991
- Luminescence and electrical properties of ZnSe grown by photo-assisted OMVPEJournal of Crystal Growth, 1990
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPEJapanese Journal of Applied Physics, 1989