Novel technique for p-type nitrogen doped ZnSe epitaxial layers
- 18 January 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (3) , 270-272
- https://doi.org/10.1063/1.108986
Abstract
We report a novel technique to obtain p‐type ZnSe layers doped with nitrogen. The layers were grown in a low‐pressure metalorganic vapor phase epitaxy system using ammonia as the dopant source. A rapid thermal anneal was used to enhance the activation of the nitrogen acceptors. Net acceptor concentration values as high as 3×1016/cm3 were obtained from capacitance‐voltage measurements and the profile was uniform over the thickness of the epitaxial layers. The 7 K photoluminescence spectrum was dominated by the acceptor bound exciton peak; the donor‐acceptor pair spectra were also observed.Keywords
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